The Effect of the Active Layer Thickness on the Negative Bias Illumination Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors
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چکیده
The effect of the active layer thickness (TIGZO) on the negative bias illumanation stress (NBIS)-induced threshold voltage shift (∆VT) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states-based simulator (DeAOTS). The NBIS-induced ∆VT in a-IGZO TFT with a thinner TIGZO is negatively larger than that in a-IGZO TFTs with a thicker TIGZO. It is inferred that the TIGZO-dependent ∆VT is caused by either the hole trapping into the gate insulator near the interface or the oxygen vacancy (Vo) ionization more activated by a larger surface electric field EIGZO as TIGZO becomes thinner.
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تاریخ انتشار 2010